III V Compound Semiconductor materials based HEMT devices for RF applications
Abstract
T.D.Subash
Due to tremendous advances in lithography, the semiconductor industry has followed Moore’s law by shrinking transistor dimensions continuously for the last 30 years. The big challenge in VLSI is that continued scaling of planar silicon, CMOS transistors will be more and more difficult because of both fundamental limitations and practical considerations as the CMOS transistor dimensions approach tens of nanometers. To address the scaling challenge, both industry and academia have been investigating alternative device structure and alternative materials, among which III-V compound semiconductor materials as a promising candidates for future logic applications because of their light effective masses lead to high electron mobility’s and high on-currents, which translates into high device performance at low supply voltage. Due to outstanding electron transport properties and high mobility III-V compound semiconductor materials are the better channel materials for future highly scaled CMOS devices.
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